| abstract |
The present invention relates to the preimpregnation material producing semiconductor device, use metal-clad stack and the printed substrate of this preimpregnation material, and use the semiconductor device of this printed substrate, this semiconductor device is even at, when using Cu line, also showing superior reliability (heat-resisting and moisture-proof reliability) under high temperature and super-humid conditions.Specifically it is disclosed that the preimpregnation material comprising base material and B-b stage resin b compositions, this B-b stage resin b compositions comprises (a) thermosetting resin, (b) has the hydrotalcite compound of specific composition, (c) zinc molybdate and (d) lanthana, and wherein said resin combination is submerged in described base material；Metal-clad stack, the above-mentioned preimpregnation material of its multilamellar comprising one layer or stacking and the metal forming possessed on a surface or two surfaces of this preimpregnation material；Printed substrate, the above-mentioned preimpregnation material of its multilamellar comprising one layer or stacking and possess on a surface or two surfaces of described preimpregnation material, the line pattern that comprises metal forming；And semiconductor device, it comprises above-mentioned printed substrate, the semiconductor element that is arranged on this printed substrate and the Cu line by the line pattern of this printed substrate and the electrical connection of this semiconductor element. |