| abstract |
A kind of base plate processing method being used for the space of line (12) along regulation to be formed at silicon substrate (11), it possesses: by the laser (L) as ellipticity being elliptically polarized light beyond 1 is concentrated on silicon substrate (11), form multiple upgrading point (S) along line (12) in the inside of silicon substrate (11), thus form the 1st operation comprising the upgrading region (7) of multiple upgrading point (S); And after the 1st operation, by implementing anisotropic etching process to silicon substrate (11), be in progress with making etching selectivity along upgrading region (7), thus the 2nd operation in space is formed at silicon substrate (11), in the 1st operation, relative to the mode that the moving direction of silicon substrate (11) and the direction of polarized light angulation of laser (L) they are more than 45 °, laser (L) is concentrated on silicon substrate (11) with laser (L), and in the mode formed a line along line (12) to form multiple upgrading point (S). |