http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103022257-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac31afbea1cbbb03498644721ffb4a62 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2012-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c258b5d6f6c3ce6fa6a7ee96452a8f5c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e0ebf5d1b6aacd093c263e66c8045f05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0e693bbf89f585cbc81db86b113801b1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_480ccd77625f207bd2925fa693c190f2 |
| publicationDate | 2015-01-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103022257-B |
| titleOfInvention | Manufacturing method of p-i-n junction InGaN solar cells |
| abstract | The invention discloses a manufacturing method of p-i-n junction InGaN solar cells. The manufacturing method includes the steps of cleaning a substrate; growing a GaN layer on the substrate; growing a full strain relaxation high-In-content InGaN layer; continuing to grow an InGaN superlattice layer in high-In-content InGaN/GaN structure, a high-In-content n-InGaN layer, a high-In-content i-InGaN layer, and a high-In-content p-InGaN layer; heating to grow a p-GaN layer; etching the p-GaN layer to obtain a cell top; forming a grid ohmic electrode on the p-GaN layer by evaporation; and forming an ohmic electrode on the top of the high-In-content n-InGaN layer by evaporation. The p-i-n junction InGaN solar cell structure is directly grown on the full strain relaxation InGaN layer and the InGaN superlattice layer, the full strain relaxation InGaN layer and the InGaN superlattice layer cause no mismatch strain to the p-i-n junction InGaN solar cell layer, and accordingly quality and cell conversion efficiency of the p-i-n junction InGaN solar cell material can be increased effectively. In addition, the low-In-content i-InGaN layer is located between the high-In-content n-InGaN layer and the p-InGaN layer, lattice mismatch causes tension strain to the i-InGaN layer, and accordingly conversion efficiency of the p-i-n junction InGaN solar cell can be further improved. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2018129353-A1 |
| priorityDate | 2012-12-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.