http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103021862-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2012-03-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103021862-B |
| titleOfInvention | There is the metal gate device of low temperature deoxygenation |
| abstract | The invention discloses a kind of semiconductor device with metal gates.Device comprises: Semiconductor substrate, is positioned at source feature and the drain feature of semiconductor substrate, and in semiconductor substrate and the gate stack be arranged between source feature and drain feature.Gate stack comprises: boundary layer (IL), be formed in high k (HK) dielectric layer of semiconductor substrate, be formed in the deoxygenation metal at HK dielectric layer top, by using the equivalent oxide thickness (EOT) of the change of low temperature deoxygenation technology formation and being deposited on the metal gate stack of deoxygenation metal layer.Present invention also offers a kind of metal gate device with low temperature deoxygenation. |
| priorityDate | 2011-09-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.