http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-103000482-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76802 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-67 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 |
| filingDate | 2012-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-103000482-B |
| titleOfInvention | Engraving method and device |
| abstract | A kind of engraving method disclosed by the invention comprises: by the first direct current (DC) bias etching oxidation nitride layer of plasma chamber, removes photoresist layer, and be etched through lining form by the 3rd direct current (DC) bias of plasma chamber by the second direct current (DC) bias of plasma chamber.In order to reduce the copper deposition in plasma chamber wall, the 3rd direct current (DC) bias is arranged to be less than the first direct current (DC) bias and the second direct current (DC) bias.The invention also discloses engraving method and device. |
| priorityDate | 2011-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.