http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102995123-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B19-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-406 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B9-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B9-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-38 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B19-04 |
| filingDate | 2012-09-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102995123-B |
| titleOfInvention | The manufacture method of group 13 nitride crystal |
| abstract | The invention provides a kind of manufacture method of group 13 nitride crystal, that includes crystal growing process, group 13 nitride crystal is formed by the group 13 nitride crystal by the seeded growth of the gallium nitride with structure of hexagonal crystal with structure of hexagonal crystal, wherein the length " L " in the c-axis direction of seed crystal is 9.7 millimeters or longer, and length " L " is greater than 0.813 with the L/d ratio of crystal diameter " d " on c face.Crystal growing process includes and to be formed in the side of group 13 nitride crystal and the comprise { periphery in 10-10} face the and comprise { periphery in 10-11} face, and formed in the bottom surface of group 13 nitride crystal and comprise { the process of the periphery in 0001} face. |
| priorityDate | 2011-09-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.