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filingDate 2012-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b96273652e79f29654fbd9289fe67287
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publicationDate 2015-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-102993646-B
titleOfInvention Polythiophene nanometer conductive composite material and preparation method thereof
abstract The invention provides a polythiophene nanometer conductive composite material and a preparation method of the polythiophene nanometer conductive composite material based on the advantages of attapulgite of special crystal structure, physico-chemical property and low price, solving the shortcoming in the prior art that the polythiophene-inorganic nanometer composite material is high in cost. The polythiophene nanometer conductive composite material is an iodine-doped porous rod shaped silica/polythiophene amorphous conductive composite material. The preparation method of the polythiophene nanometer conductive composite material comprises the following steps in sequence: dissolving a thiophene monomer into an organic solvent I; adding purified nano attapulgite and an oxidant to an organic solvent II; dropping the mixture to the thiophene solution in an one-by-one way so as to prepare the thiophene/polythiophene nano composite material; and placing the prepared thiophene/polythiophene nano composite material into the iodine vapor to prepare into the porous rod shaped silica/polythiophene amorphous conductive composite material.
priorityDate 2012-12-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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