http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102983067-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-00 |
| filingDate | 2011-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-10-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102983067-B |
| titleOfInvention | The manufacture method of mixing lines |
| abstract | The invention provides a kind of manufacture method mixing lines, comprise the following steps: A, on bottom, form material layer, the first hard mask layer and the second hard mask layer successively; B, to the hard mask graph of second hard mask layer photoetching/etching formation second; C, on the first hard mask layer, form photoresist mask graph; D, with the second hard mask graph and photoresist mask graph for mask, etch the first hard mask layer, form the first hard mask graph; E, with first and hard mask graph for mask, etachable material layer, forms the first lines and the second lines.According to mixing lines manufacture method of the present invention, split by same level figure by lines size, large lines ordinary optical exposes, little lines electron beam exposure, significantly reduces the time for exposure under being intended to not affect the prerequisite of graphical quality.Adopt 2 hard masking methods effectively to solve I Lithography glue and the interactional problem of electron beam resist simultaneously. |
| priorityDate | 2011-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.