| abstract |
The invention provides a kind of III nitride semiconductor devices and manufacture method thereof of the reduction that can realize reliably the dislocation density of semiconductor layer. In the time manufacturing III nitride semiconductor devices (1), after substrate (20) upper formation mask layer (40), by the pattern (44) of mask layer (40), the nano-pillar (50) being made up of III group-III nitride semiconductor is selectively grown up, on mask layer (40), make III nitride semiconductor layer (10) grow up. |