http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102959710-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4925 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28079 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32051 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-49 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-31 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2011-05-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-03-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102959710-B |
| titleOfInvention | Metal gate structures and methods for forming thereof |
| abstract | Metal gate structures and methods for forming thereof are provided herein. In some embodiments, a method for forming a metal gate structure on a substrate having a feature formed in a high k dielectric layer may include depositing a first layer within the feature atop the dielectric layer; depositing a second layer comprising cobalt or nickel within the feature atop the first layer; and depositing a third layer comprising a metal within the feature atop the second layer to fill the feature, wherein at least one of the first or second layers forms a wetting layer to form a nucleation layer for a subsequently deposited layer, wherein one of the first, second, or third layers forms a work function layer, and wherein the third layer forms a gate electrode. |
| priorityDate | 2010-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 85.