http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102956542-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2011-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-01-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102956542-B |
| titleOfInvention | A kind of manufacture method of semiconductor device |
| abstract | The invention provides a kind of manufacture method of semiconductor device, comprise: Semiconductor substrate is provided, be formed with dummy gate structure on the semiconductor substrate, described dummy gate structure comprises sacrificial gate dielectric layer, and is formed with the clearance wall structure near described dummy gate structure in the both sides of described dummy gate structure; Remove described sacrificial gate dielectric layer, to form a gate groove in the middle of described clearance wall structure, and form workfunction layers and barrier layer successively in described gate groove; Use a sacrifice layer to fill up described gate groove, and cover described workfunction layers and barrier layer; Remove the described sacrifice layer at described clearance wall structure top, barrier layer and workfunction layers; The described sacrifice layer in described gate groove is removed in etching, obtains a groove; Form soakage layer in the trench; Implement the backfill of metal gate.According to the present invention, the gate groove with larger open top characteristic size can be provided, improve the effect adopting traditional handicraft to implement metal gate filling. |
| priorityDate | 2011-08-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 43.