http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102931583-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6a6f422b091ba12ea61d4adbf1b0e8e |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30 |
| filingDate | 2012-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_90136e5f663327ae24bb6a944779d001 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5cbd1265b2508cbee16262aa11039238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4f564bdfdbaa99bed38818a6f73caddd |
| publicationDate | 2014-06-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102931583-B |
| titleOfInvention | Electrically pumped random laser device based on dual SiO2-ZnO structure and preparation method and application thereof |
| abstract | The invention provides an electrically pumped random laser device based on a dual SiO2-ZnO structure and a preparation method and application thereof. The electrically pumped random laser device comprises a first ZnO thin film, a first SiO2 thin film, a second ZnO thin film, a second SiO2 thin film and a semi-transparent electrode which are sequentially deposited on the front face of a silicon substrate from bottom to top, wherein an ohmic contact electrode is deposited on the back face of the silicon substrate. The invention also provides a preparation method of the laser device. The preparation method comprises the following steps of: 1) depositing the first ZnO thin film on the front face of the silicon substrate; 2) depositing the first SiO2 thin film on the first ZnO thin film; 3) depositing the second ZnO thin film on the first SiO2 thin film; 4) depositing the second SiO2 thin film on the second ZnO thin film; 5) sputtering the semi-transparent electrode on the second SiO2 thin film, and sputtering the ohmic contact electrode on the back face of the silicon substrate, thus obtaining the electrically pumped random laser device based on the dual SiO2-ZnO structure. According to the electrically pumped random laser device based on the dual SiO2-ZnO structure, the threshold current of is obviously reduced and the light output power is obviously improved. Moreover, the preparation method is simple, can be compatible with the conventional complementary metal oxide semiconductor (CMOS) process and is favorable for large-scale production and application of devices. |
| priorityDate | 2012-11-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 20.