http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102903739-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-161 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0251 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02507 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 |
| filingDate | 2012-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-01-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102903739-B |
| titleOfInvention | There is the semiconductor structure of rare earth oxide |
| abstract | The present invention proposes a kind of semiconductor structure with rare earth oxide, comprising: Semiconductor substrate; With alternately stacking multilayer insulation oxide skin(coating) and the multilayer single-crystal semiconductor layer that are formed on a semiconductor substrate, wherein, the material of the insulation oxide layer contacted with Semiconductor substrate is rare earth oxide or silicon dioxide, and the material of remaining insulation oxide layer is single crystal rare earth oxide.According to the semiconductor structure of the embodiment of the present invention, by the Lattice Matching between insulation oxide layer and single-crystal semiconductor layer, significantly can reduce the crystal defect of semiconductor structure, thus be conducive on this semiconductor structure, form high-performance, highdensity three-dimensional semiconductor device further, increase substantially the integration density of device, the three-dimensional that simultaneously also can realize different components is integrated. |
| priorityDate | 2012-10-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.