http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102899720-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6925725de2b72426433c9a83d3a6b29a http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ac31afbea1cbbb03498644721ffb4a62 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B28-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 |
| filingDate | 2012-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8826ac2a07bd7e609a60a00ad6a11812 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_419d35967f20252197d7e5e029ee61f9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dafb0e376ce549f2068b2b34b3aaec41 |
| publicationDate | 2015-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102899720-B |
| titleOfInvention | Ingot casting process for high-efficiency polycrystalline silicon |
| abstract | The invention discloses an ingot casting process for high-efficiency polycrystalline silicon. The process comprises the steps of (1) arranged heat-insulating strips below heaters on two sides of an ingot casting furnace; (2) filling a silicon material and an electroactive doping agent into a quartz crucible, and sending the quartz crucible into the ingot casting furnace; (3) heating to completely melt the silicon raw material and the electroactive doping agent; (4) adjusting the temperature of heaters to be in a range of 1425-1440 DEG C at the initial period of crystal growth, quickly opening a heat-insulating bottom plate, and adjusting the opening the heat-insulating bottom plate to be in a range of 1-8cm, wherein a layer of dendritic crystals are grown longitudinally along the bottom of the crucible; and (5) controlling the temperature gradient of a solid-liquid phase at the middle period and the later period of crystal growth, keeping a straight solid-liquid interface with dendritic crystals at the bottom serving as seed crystals, and producing polycrystalline silicon containing a large amount of twin crystals through directional solidification in a vertical upward direction. Polycrystalline silicon chips are produced by the ingot casting process, the battery efficiency is 0.4-0.6% higher than that of ordinary polycrystalline silicon, the average battery efficiency of integrated ingot silicon chips reaches 17.5%, and the maximum efficiency can be up to 18%. |
| priorityDate | 2012-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.