http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102881598-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-77 |
| filingDate | 2012-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-08-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102881598-B |
| titleOfInvention | The manufacture method of thin-film transistor, the manufacture method of array base palte and display unit |
| abstract | The invention provides a kind of manufacture method of thin-film transistor, the manufacture method of array base palte and display unit, belong to technical field of manufacturing semiconductors.The semiconductor layer of described thin-film transistor is made by metal oxide and is formed, the manufacture method of described thin-film transistor adopts two step etchings to form TFT raceway groove, the first step passes through dry etching, remove a part for the source and drain metal level of semiconductor layer channel region, second step passes through wet etching, remove the remaining source and drain metal level of semiconductor layer channel region, form TFT raceway groove.According to the present invention, do not needing, under the prerequisite forming etching barrier layer, the protection of the metal oxide semiconductor layer below to TFT raceway groove can be realized. |
| priorityDate | 2012-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.