Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f4a8faea375370b67c9d71e67db32bcd |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0465 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0272 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0322 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-032 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-046 |
filingDate |
2011-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2015-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e3e18d3c675baad67fe307ce39c56f3a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b68e58fbfcf09cd007b74fc89000932 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4577cdc3de1b8b117fc91a0b4d492759 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_47992befff00cca201d972624d1c1c71 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1dcb085f917ca4eeafa2b4aaad1dd6cc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d908d1ed23ed12c510d2ecec6096f949 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_390dfd704dab45b7ac3fc116336d1c0c |
publicationDate |
2015-07-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-102870224-B |
titleOfInvention |
Photoelectric conversion device |
abstract |
Disclosed is a photoelectric conversion device having improved photoelectric conversion efficiency. The photoelectric conversion device comprises an electrode layer (2) and a light-absorbing layer (3) arranged on the electrode layer (2). The light-absorbing layer (3) is composed of a laminate of multiple semiconductor layers each containing a chalcopyrite compound semiconductor. Each of the semiconductor layers contains oxygen, and the molar concentration of oxygen in the vicinity of each of the surfaces of the semiconductor layers on the laminated sides is higher than the average molar concentration of oxygen in the semiconductor layers. |
priorityDate |
2010-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |