http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102870223-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f4a8faea375370b67c9d71e67db32bcd |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-541 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0749 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0272 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-046 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0749 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-032 |
| filingDate | 2011-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b68e58fbfcf09cd007b74fc89000932 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1dcb085f917ca4eeafa2b4aaad1dd6cc |
| publicationDate | 2015-06-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102870223-B |
| titleOfInvention | Photoelectric conversion device |
| abstract | Disclosed is a photoelectric conversion device having high adhesion between a first semiconductor layer and an electrode layer therein and high photoelectric conversion efficiency. The photoelectric conversion device (10) comprises an electrode layer (2), a first semiconductor layer (3) which is arranged on the electrode layer (2) and contains a I-III-VI chalcopyrite compound semiconductor and oxygen, and a second semiconductor layer (4) which is arranged on the first semiconductor layer (3) and can form a pn junction with the first semiconductor layer (3). In the photoelectric conversion device (10), the molar concentration of oxygen in a part located on the electrode layer (2) side from the center part of the lamination direction of the first semiconductor layer (3) is higher than the molar concentration of oxygen in the whole of the first semiconductor layer (3). |
| priorityDate | 2010-06-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.