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filingDate 2011-04-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2016-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2016-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-102859704-B
titleOfInvention The manufacture method of semiconductor device
abstract In the manufacturing process of bottom grating structure transistor with oxide semiconductor film, carry out the dehydration by heat treatment or dehydrogenation processes and oxygen doping processes.There is the variable quantity that can reduce transistor threshold voltage before and after bias-heat stress test (BT test) through the oxide semiconductor film processed by the dehydrationization of heat treatment or dehydrogenation and the transistor processed by oxygen doping, such that it is able to realization has the transistor that the reliability of stable electrical characteristics is high.
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