http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102822395-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24355 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02494 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02661 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-16 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02614 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B25-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02447 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0237 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02529 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B25-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 |
| filingDate | 2011-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102822395-B |
| titleOfInvention | The manufacture method of monocrystalline 3C-SiC substrate and the monocrystalline 3C-SiC substrate obtained by the method |
| abstract | The invention provides a kind of manufacture method of monocrystalline 3C-SiC substrate, can significantly reduce the surface imperfection produced in epitaxial process, and after simplification while operation, the quality as semiconducter device can be guaranteed.Present method is the manufacture method of the monocrystalline 3C-SiC substrate by forming monocrystalline 3C-SiC layer at base substrate Epitaxial growth, carry out the first growth phase and the second growth phase, in this first growth phase, to become by the higher surface of flatness and to be dispersed in the mode of the condition of surface that the surface micropore in this surface is formed to form described monocrystalline 3C-SiC layer, in this second growth phase, make the further epitaxy of monocrystalline 3C-SiC layer obtained in described first growth phase in the mode of the described surface micropore of burying surface in the region departing from rate-controlling. |
| priorityDate | 2010-03-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.