| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49115
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T29-49108
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E60-10 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-662
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-0428
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-1395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-366
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M10-42
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-0471
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-386
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-661
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M4-667
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01M10-0525 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M4-134
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M4-1395
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01M4-66 |
| filingDate |
2011-03-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2016-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-102812581-B |
| titleOfInvention |
The forming method of the electrode of secondary cell and secondary cell |
| abstract |
Purpose is to provide the secondary cell of excellent charge/discharge cycle characteristics.Thering is provided a kind of secondary cell, this secondary cell has the electrode comprising silicon or silicon compound, and wherein this electrode is provided with the layer comprising silicon or silicon compound on the layer of metal material；This metal material layer and this comprise and between silicon or the layer of silicon compound, be provided with described metal material and the mixed layer of described silicon；The oxygen affinity of described metal material is higher than the oxygen affinity carrying out the ion that electric charge is given and accepted in this secondary cell；Further, the oxide of described metal material does not have insulating properties.Carrying out the ion that electric charge gives and accepts is alkali metal ion or alkaline-earth metal ions. |
| priorityDate |
2010-03-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |