| abstract |
A base material is provided, on at least one surface, with a gas barrier layer and a transparent conductive film, wherein: the gas barrier layer is configured from a material which at least contains oxygen atoms, nitrogen atoms, and silicon atoms; the surface layer of the gas barrier layer has an oxygen atom abundance of 60 to 75%, a nitrogen atom abundance of 0 to 10%, and a silicon atom abundance of 25 to 35% in relation to the total abundances of the oxygen, nitrogen and silicon atoms; and the surface layer of the gas barrier layer has a film density of 2.4 to 4.0g/cm3. |