| abstract |
The present invention provides a method for producing a ferroelectric thin film in which a ferroelectric thin film whose crystal orientation is preferentially controlled to a (110) plane can be easily obtained without providing a seed layer or a buffer layer. A ferroelectric thin film is produced on the lower electrode by applying a composition for forming a ferroelectric thin film on the lower electrode of a substrate having a lower electrode whose crystal plane is (111) axially oriented, and heating to crystallize it. In the method, the ferroelectric thin film includes an orientation control layer whose crystal orientation is preferentially controlled to a (110) plane, and the crystallized layer thickness of the orientation control layer is formed within a range of 5 nm to 30 nm. |