http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102779744-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_36f8253f3d0d59bcd9259217d4385d10 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6659 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28008 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-283 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
| filingDate | 2012-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1a8389f0bc73b21f4d5a9a516851ecc9 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4ef6e520abefa6fecc6cc2f43f576f7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c1a5144f100913c9d943a61c7e61040e |
| publicationDate | 2015-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102779744-B |
| titleOfInvention | Dummy structures and methods |
| abstract | A semiconductor device and a method of making a semiconductor device are disclosed. The method of manufacturing a semiconductor device comprises forming a material layer on a substrate, patterning a first semi-global region with a first main pattern and patterning a second semi-global region with a second main pattern, wherein the first main pattern is different than the second main pattern. The method further comprises introducing a first dummy pattern in the first semi-global region so that a first sidewall area surface density of the first main pattern and the first dummy pattern in the first semi-global region and a second sidewall area surface density of the second main pattern in the second semi-global region are substantially a same density. |
| priorityDate | 2011-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 24.