http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102776495-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d2b87f5094e6ca00e896d91532184ff3 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C18-32 |
| filingDate | 2012-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8a769f01fe158194cf3119e5f4c18674 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c785ca8a79bf58a4835c7cd54a97953e |
| publicationDate | 2014-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102776495-B |
| titleOfInvention | Chemical nickel-plating method for capacitive touch screen indium tin oxide (ITO) wiring |
| abstract | The invention provides a novel chemical nickel-plating method for capacitive touch screen indium tin oxide (ITO) wiring. Compared with the conventional vacuum sputtering technology, the novel chemical nickel-plating method is low in equipment investment, low in production cost and high in efficiency; and compared with the traditional chemical nickel-plating process on a nonmetallic matrix, the novel chemical nickel-plating method has high solution stability and selectivity. The novel chemical nickel-plating method comprises the following steps of: sequentially deoiling, etching, sensitizing, activating, reducing and performing chemical nickel-plating on the ITO film glass; and the key points are that the selectivity of the ITO film is improved during sensitization by adopting sensitizing solution containing Cu+, and the sensitizing solution is more stable than the traditional Sn2+ sensitizing solution; during etching, the etching process is stabilized by employing etching solution containing S2O82- or HS2O8-, and the etching effect is improved; and the chemical nickel-plating is performed at the low temperature of 55-65 DEG C, the plating solution is stable, and the plating layer is smooth and dense. The results prove that the method is easy to operate and high in speed; the ITO surface nickel layer is completely covered and has high adhesive force, and the glass matrix is not covered by the nickel layer and has high selectivity. |
| priorityDate | 2012-07-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.