http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102775989-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0ffba9e8ee1e8e5ba6f6ee0a7303494d |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K11-78 |
| filingDate | 2012-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_449f2d5b7fa4bd564b368f60a23b1e0a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f902aedeae31ca338574646e3d1cb095 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9f4b664007d5a707dd9a0901db52e0f2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3b97e5960f3fdf55af5cb1a6b4ce4cca http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_318f54adc7ea792320f58a0628f84cb2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_60575ca975d234becdf4a8d7d7e67176 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1411321173fae96ba11e8d8dd3edc86d |
| publicationDate | 2014-11-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102775989-B |
| titleOfInvention | Synthetic method of terbium-doped zinc tungstate long afterglow nano rod array |
| abstract | The invention relates to a synthetic method of a terbium-doped zinc tungstate long afterglow nano rod array. The synthetic method comprises the steps of: dissolving proper zinc acetate into anhydrous ethanol solution to prepare a film-making solution, dipping the hydroxylated sheet glass into the film-making solution, and lifting to form a film; carrying out thermal treatment on the coated sheet glass to prepare a ZnO (zinc oxide) seed film; preparing a turbid liquid by taking zinc nitrate, terbium nitrate and sodium tungstate as raw materials, introducing proper hexamethylene tetramine as a surfactant, adjusting the pH value to 2-4, and thus forming a transparent growth solution; putting the sheet glass loaded with the ZnO seed film into the growth solution, controlling the water bath temperature of the growth solution at 40-80 DEG C, growing for 12-24 hours, taking out the sheet glass, washing and drying to prepare the terbium-doped zinc tungstate nano rod array with luminescence property. |
| priorityDate | 2012-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 45.