http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102769079-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f75430d8c29187e89ed37412ae4ec9a3 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-405 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-382 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate | 2012-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_594c1b062514d1c00b7cb8ff014843ad http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b3aa8629db6bf1d6c560341064ecc08c |
| publicationDate | 2015-02-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102769079-B |
| titleOfInvention | Method for manufacturing p-type and n-type semiconductor light extraction vertical conduction LED (light-emitting diode) |
| abstract | The invention discloses a method for manufacturing a p-type semiconductor light extraction vertical conduction LED (light-emitting diode). The method comprises the following steps of: providing a substrate, epitaxially growing a luminous structure of the LED on the front side of the substrate, wherein the luminous structure comprises a gallium nitride buffer layer and a gallium nitride LED epitaxial layer which are sequentially formed, and the gallium nitride LED epitaxial layer comprises an n-type gallium nitride layer, a luminous layer and a p-type gallium nitride layer which are sequentially arranged; forming a p- electrode structure on the p-type gallium nitride layer, wherein the p- electrode structure comprises a transparent electrode and a p- pad which are sequentially arranged; slotting on the back of the substrate, and remaining on the n-type gallium nitride layer; and forming an n- electrode structure on the back of the substrate, wherein the n- electrode structure comprises a transparent electrode, a reflecting metal layer and a joint metal layer which are sequentially arranged. The invention also discloses a method for manufacturing an n-type semiconductor light extraction vertical conduction LED. According to the method, the light extraction amount and the luminous efficiency of the vertical conduction nitride LED can be improved. |
| priorityDate | 2012-07-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.