| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-547
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-52 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03921
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02167
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03529
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035281
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1892
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0201
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0682
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022458
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-056
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-068
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1804
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02363
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-022441 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-042
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0216 |
| filingDate |
2010-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2016-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2016-01-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-102763226-B |
| titleOfInvention |
Use high-efficiency photovoltaic back of the body contact solar cell structure and the manufacture method of thin plate semiconductor |
| abstract |
The invention provides back of the body knot back of the body contact solar cell and manufacture method thereof.Described back of the body knot back of the body contact solar cell comprises substrate, described substrate has: the light with passivation layer catches front face surface, the base region of doping, and the backside emitter region of doping, the polarity of described backside emitter region is contrary with the base region of doping.Backside passivation layer on emitter and the reflector of patterning form light and catch back reflector.Interdigital metallization pattern is set at the back side of described solar cell, and provides permanent reinforcement for the support of this battery. |
| priorityDate |
2009-12-09-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |