http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102760686-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b0a6df6844944a1e86c15955ae218d12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2011-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6985872f4634d95a0d2fac9e88f9f3ee http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b6e0d625ff9f9fa1824332db6d74d873 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a4d35a8a306a17e47e6720b1ec8af2a5 |
| publicationDate | 2014-12-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102760686-B |
| titleOfInvention | Semiconductor device and forming method of interconnection structure |
| abstract | The invention provides a semiconductor device and a forming method of an interconnection structure. The forming method of the interconnection structure comprises the following steps: forming a sacrificial layer on a first substrate; rubbing the sacrificial layer by utilizing a stamping mould, forming a beam which is provided with a top surface and two lateral walls on the sacrificial layer; forming a carbon monoatomic layer among preset positions of the top surface and lateral walls of the bead and adjacent beads to serve as an interconnection structure; forming an adhesive layer to cover the carbon monoatomic layer; removing the sacrificial layer; transferring the adhesive layer and the carbon monoatomic layer to a second substrate which is a semiconductor substrate with a device structure, and electrically connecting the carbon monoatomic layer and the device structure. By utilizing the high conductivity of the carbon monoatomic layer, the interconnection structure consisting of the carbon monoatomic layer is formed, the RC (resistor-capacitor) delaye can be reduced, and the performance of the semiconductor device can be improved. |
| priorityDate | 2011-04-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.