http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102751415-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-0093 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-42 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-42 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-04 |
| filingDate | 2007-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-09-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102751415-B |
| titleOfInvention | There is luminescent device and the manufacture method thereof of vertical stratification |
| abstract | Disclose a kind of luminescent device with vertical stratification and manufacture method thereof, luminescent device, including: supporting layer；The first electrode on described supporting layer；Semiconductor structure on the first electrode, described semiconductor structure has the side surface of inclination；Hyaline layer on described semiconductor layer；The second electrode in a part for described semiconductor structure；And metal level, it is arranged between described semiconductor structure and described second electrode, and described metal level has reactivity at least one element being included in described semiconductor structure, and wherein, described metal level serves as Ohmic contact on described semiconductor structure. |
| priorityDate | 2006-02-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.