http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102709187-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-466 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-30 |
| filingDate | 2012-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2017-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2017-03-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102709187-B |
| titleOfInvention | Semiconductor device and manufacturing method thereof |
| abstract | A semiconductor device having excellent electrical characteristics and a method of manufacturing the semiconductor device are provided. A method for manufacturing a semiconductor device includes the steps of: forming a gate electrode; forming a gate insulating film to cover the gate electrode; forming an oxide semiconductor film on the gate insulating film; forming a hydrogen permeable film on the oxide semiconductor film; forming a hydrogen capture film on the permeable film; performing heat treatment to release hydrogen from the oxide semiconductor film; forming a source electrode and a drain electrode in contact with a part of the oxide semiconductor film; and removing the exposed portion of the hydrogen capture film to form a hydrogen permeable film Channel protection film. A semiconductor device manufactured by the above method is also provided. |
| priorityDate | 2011-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 59.