http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102709183-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate | 2011-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102709183-B |
| titleOfInvention | The method being used for producing the semiconductor devices |
| abstract | The present invention provides a kind of method being used for producing the semiconductor devices, and described method includes: provides Semiconductor substrate, is formed with grid structure on the semiconductor substrate, and will be formed in described Semiconductor substrate in the part of source/drain region and be formed with groove；Selective epitaxial growth method is used to form boron diffusion impervious layer in uniform thickness on the bottom and sidewall of described groove；And use selective epitaxial growth method to form boracic germanium silicon stressor layers on described boron diffusion impervious layer.The method according to the invention can suppress the boron being entrained in SiGe stressor layers by original position SiGeB stress introducing technology to be diffused in channel region due to follow-up Technology for Heating Processing, thus effectively prevent short-channel effect, and then improve the electric property of the PMOS transistor ultimately formed. |
| priorityDate | 2011-03-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.