http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102707580-B

Outgoing Links

Predicate Object
assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d6a6f422b091ba12ea61d4adbf1b0e8e
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B01D46-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20
filingDate 2012-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a78a3fc7f5e5f005e15f5c56a6dde07d
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_864db6cbdc0a59af09a41d79f49995d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c48d2bc0146c09215c31992a93f15162
publicationDate 2014-01-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-102707580-B
titleOfInvention Hermetic sealing and gas-liquid separation and recovery device for immersed photoetching machine
abstract The invention discloses a hermetic sealing and gas-liquid separation and recovery device for an immersed photoetching machine, which is installed between a projection objective group of the immersed photoetching machine and a silicon wafer, and comprises a seal and injected liquid recovery device, a gas-liquid separation sheet group and a liquid recovery sheet group, wherein the seal and injected liquid recovery device is composed of an immersion unit front end cover and an immersion unit rear end cover. The hermetic seal and gas-liquid separation and recovery device is used for completing the functions of seal and injected liquid recovery in a slit flow field of the immersed photoetching system, so as to achieve continuous and stable updating of the slit flow field. A hermetic sealing structure is used at the edge of the slit flow field to prevent liquid leakage, a gas-liquid separation and recovery structure is adopted to achieve separation and respective recovery of gas and liquid, and generation of gas-liquid two-phase flow is avoided, so that the pipeline vibration problem caused by simultaneous recovery of gas-liquid two-phase flow is avoided. No matter which direction the silicon wafer moves to, the gas-liquid separation and recovery structure can dynamically adjust the height of the liquid level in the device.
priorityDate 2012-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

Incoming Links

Predicate Subject
isDiscussedBy http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID5461123
http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419559541

Total number of triples: 16.