http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102703900-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_a62555ff12316a9a118542896b4c0af7 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C28-04 |
| filingDate | 2011-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6527c0c359f9f8363a270fe17a2eaa92 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86216f866074ba1c43d3b098e33cb866 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c04429529d00b97adabb5e5effec96a3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a492856969af6dea6152eb225151a6e |
| publicationDate | 2014-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102703900-B |
| titleOfInvention | Method for depositing film, panel and display |
| abstract | The invention discloses a method for depositing a film, a panel and a display, and the method comprises the following steps: depositing a layer of indium tin oxide film on a substrate surface; controlling silane to output in a first flow, allowing the silane to react with ammonia gas on the indium tin oxide film to form a silicon nitride buffer layer covering the indium tin oxide film; controlling the silane to output in a second flow greater than the first flow, allowing the silane to react with ammonia gas to form a silicon nitride layer which covers the silicon nitride buffer layer. During the first deposition to form the silicon nitride buffer layer, the reaction is not violent, so the reaction between the generated hydrogen and oxygen in an ITO film is difficult, and the atomization phenomenon is slight; during the second deposition to form the silicon nitride cover layer, the generated hydrogen is isolated from the oxygen in the ITO film by the silicon nitride buffer layer, so no atomization phenomenon occurs; the generation of metal precipitates at the interface of the ITO film and the silicon nitride film is also put an end; therefore surface flatness of a device is improved and light transmittance is increased. |
| priorityDate | 2011-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.