Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0214 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-47573 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-105 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66409 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-045 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-44 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
filingDate |
2012-03-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2017-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2017-08-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-102694006-B |
titleOfInvention |
Semiconductor device and the method for manufacturing semiconductor device |
abstract |
The present invention relates to semiconductor device and the method for manufacturing semiconductor device.One target is that have the highly reliable semiconductor device for stablizing electrical characteristic by using with the oxide semiconductor film of electrical characteristic is stablized to provide.Another target is that the semiconductor device with high mobility is provided by using the oxide semiconductor film with high crystalline.Crystalline oxide semiconductor film is formed and contacted on the dielectric film reduced in its surface roughness, and thus oxide semiconductor film can have stable electrical characteristic.Correspondingly, the highly reliable semiconductor device with stable electrical characteristic can be provided.Furthermore it is possible to provide the semiconductor device with high mobility. |
priorityDate |
2011-03-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |