http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102683388-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7849 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78681 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78654 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78603 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08 |
| filingDate | 2012-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2016-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2016-06-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102683388-B |
| titleOfInvention | Semiconductor structure and forming method thereof |
| abstract | The present invention provides a kind of semiconductor structure and forming method thereof, and this semiconductor structure includes: Semiconductor substrate；Form the groove in described Semiconductor substrate, described groove is filled with rare earth oxide；It is positioned partially or entirely in channel region on described rare earth oxide；With the source region and the drain region that are positioned at described channel region both sides.By at the source region of semiconductor device and drain region lanthanide oxide layer formed below, thus introducing the adjustable stress of type and size to source-drain area and the channel region of cmos device, it is obviously improved the mobility of semiconductor device, and, utilize the crystal property of rare earth oxide, in the way of crystal growth, form stress riser, greatly simplifie technological process. |
| priorityDate | 2012-05-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID415747319 http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID70700 |
Total number of triples: 17.