http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102677019-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_0b75a05785dbfd86d27a87ddcdc5a524 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-44 |
| filingDate | 2012-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a9d743e007db09e2aeebc474b766ee51 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ff77d72aabcee8ae84055ea4c07fe79 |
| publicationDate | 2014-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102677019-B |
| titleOfInvention | Motion magnetic field auxiliary-reinforced chemical vapor deposition method and device |
| abstract | The invention discloses a motion magnetic field auxiliary-reinforced chemical vapor deposition method, wherein a periodic rotating motion magnetic field is arranged in the deposition region in a chemical vapor deposition device, and the magnetic field strength in the deposition region is 100 gauss to 130 Tesla. The chemical vapor deposition method disclosed by the invention constrains the motion of charged particles in the gas phase through the motion magnetic field to reinforce the interaction between the charged particles and the deposition reaction gas molecules, improve the reaction cracking speed of the gas, reduce the deposition temperature and enhance the growth speed and quality of the material. The chemical vapor deposition method disclosed by the invention can effectively improve the reaction speed of the gas, reduce the deposition temperature of the material, enhance the growth speed and quality of the material, and overcome such problems during the chemical vapor deposition preparation process of thin film materials as too low utilization rate of mixed gas, too slow deposition speed and too high deposition temperature, and the like; and the chemical vapor deposition method is suitable for scale application. |
| priorityDate | 2012-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 16.