http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102645294-B

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_eda37409f26cb8e833ba67f2b1bc1fd5
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L41-08
filingDate 2012-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_923332da98e5ad9e99c85fdfb6d79f0e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bcb2ca91e7686de2932cde8b8c31e9fb
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http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_73b07e8f7afe146ee36b3739601cd97f
publicationDate 2013-11-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-102645294-B
titleOfInvention Pressure sensor chip based on ZnO nanoline array, and manufacturing method of pressure sensor chip
abstract The invention provides a pressure sensor chip based on a ZnO nanoline array and a manufacturing method of the pressure sensor chip. The ZnO nanoline is adopted as a piezoelectric element of a pressure sensor for the chip; the mechanical energy is converted into electric signals by using the piezoelectric effect of the ZnO so as to achieve the purpose of pressure detection; as the ZnO nanoline is used as the piezoelectric element, compared with ordinary piezoelectric elements, the process from accumulation to release can be realized by using the piezoelectric effect of the ZnO nanoline and the Schottky contact of semiconductors and metals, so that high impedance output amplifying circuits desired by the ordinary piezoelectric elements are unnecessary; in addition, the piezoelectric pressure sensor can be further minimized by synchronizing a nano-scale structure of high quality.
priorityDate 2012-04-26-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 46.