http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102637755-B

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classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
filingDate 2012-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2d861b982fd435edd3a26aabc9c45e9a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e189ac1bc36c5b48bcb7a7a342d6a429
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publicationDate 2014-05-07-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-102637755-B
titleOfInvention Nanometer structure copper zinc tin sulfide (CZTS) film photovoltaic cell and preparation method of nanometer structure CZTS film photovoltaic cell
abstract The invention discloses a nanometer structure copper zinc tin sulfide (CZTS) film photovoltaic cell, which sequentially consists of a substrate, a back electrode, a p type semiconductor nanometer wire array, an n type semiconductor thin layer, a window layer and a metal grid electrode, wherein the p type semiconductor nanometer wire array consists of semiconductor alloy (CuxB<1-x>)2Cy(DzS<1-z>), wherein x is greater than 0 but is smaller than or equal to 1, y is greater than or equal to 0 but smaller than or equal to 2, z is greater than or equal to 0 but smaller than 1, B is silver and/or gold, C is more than one kind of materials of aluminum, zinc or tin, D is selenium and/or tellurium. Through the subsequent processes of controlling the deposition element types, the deposition element sequence, the heat treatment mode and the like, the ingredients, the phase structure and the energy band structure of the absorption layer nanometer wire array are regulated, so the solar photovoltaic cells with different structures and performance can be prepared. The nanometer structure CZTS film photovoltaic cell provided by the invention has the advantages that the light reflection is reduced, good light capture capability is realized, the band gap regulation is improved, and the great improvement of the photoelectric conversion efficiency is finally realized.
priorityDate 2012-04-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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