| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823481
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823418
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7834
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0895
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-08
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate |
2005-10-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2015-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2015-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-102637741-B |
| titleOfInvention |
The resonant tunneling device of using metal oxide semiconductor processing |
| abstract |
Name of the present invention is called the resonant tunneling device of using metal oxide semiconductor processing, and an embodiment wherein relates to the manufacture method of the semiconductor device with low cut-off leakage current.The grid structure of the first device be formed in there is hard mask substrate layer on.Raceway groove is formed and has one fixed width for propping bar electrode structure below grid structure.Deposit one deck oxide or dielectric layer on substrate layer.Deposit one deck doped polysilicon layer on the oxide layer.Doped polysilicon layer between the first device and adjacent devices is formed one to cave in interface. |
| priorityDate |
2004-10-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |