http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102634756-B

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_59ac5a7645f58ce51136262813c30fe4
classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34
filingDate 2012-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2013-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_329df78eca279b759423a5e29c36f6ed
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b486b3e31c85ab683b8395578884e25e
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publicationDate 2013-08-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-102634756-B
titleOfInvention Preparation method of cadmium telluride target
abstract The invention discloses a preparation method of a cadmium telluride target, comprising the following steps of: carrying out cold-pressing molding on a cadmium telluride material to prepare the cadmium telluride target; sintering and cooling the cadmium telluride target, wherein in the sintering step, firstly introducing inert gas and heating the target to 80-150 DEG C, then preserving the heat for 50-70 minutes, and finally, gradually raising the temperature in 4 hours to 780-880 DEG C and preserving the heat for 3-5 hours. The cadmium telluride target prepared by using the method can be directly sputtered and can work without pre-sputtering; and meanwhile, the partial discharging phenomenon does not happen. The preparation method can be widely applied to scientific researches and industrial production.
priorityDate 2012-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 23.