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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352
filingDate 2012-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_af54ee3adc5808da1f5c67e5d875a761
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publicationDate 2014-06-04-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-102629633-B
titleOfInvention Method for preparing mixed solar cell based on reversal structure of GaN nanorods
abstract The invention discloses a method for preparing a mixed solar cell based on a reversal structure of GaN nanorods, mainly solving the problems of low efficiency and high cost of the current solar cell. The mixed solar cell comprises a glass protective layer (1), an indium tin oxide (ITO) conductive layer (2), a GaN buffer layer (3), n-GaN nanorods (4), poly(3-hexylthiophene) (P3HT) (5), and poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) (6), wherein the ITO conductive layer (2) is arranged on the glass protective layer (1), forming ITO transparent conductive glass; the GaN buffer layer (3) extends to the ITO conductive layer (2); the n-GaN nanorods (4) extend to the GaN buffer layer (3), with a height of 600 nm-700 nm and an interval of 400 nm-500 nm; the P3HT (5) is arranged on the n-GaN nanorods (4); and the PEDOT:PSS (6) is arranged on the P3HT (5). The mixed solar cell of the invention has the advantages of simple structure, low cost, and high efficiency in converting solar radiation into electricity, which can be used in commercial and civil power generating systems.
priorityDate 2012-04-29-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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