http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102610515-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32137 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40117 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31122 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2008-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2014-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102610515-B |
| titleOfInvention | Methods for high temperature etching a high-k material gate structure |
| abstract | Methods for etching high-k material at high temperatures are provided. In one embodiment, a method of etching a high-k material on a substrate may include providing a substrate having a high-k material layer disposed thereon into an etch chamber, forming a plasma from an etching gas mixture including at least a halogen containing gas into the etch chamber, maintaining a temperature of an interior surface of the etch chamber in excess of about 100 degree Celsius while etching the high-k material layer in the presence of the plasma, and maintaining a substrate temperature between about 100 degrees Celsius and about 250 degrees Celsius while etching the high-k material layer in the presence of the plasma. |
| priorityDate | 2007-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.