http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102603207-B

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C03C17-245
filingDate 2012-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2014-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2c631a4793f9ab128ae4903c1e4f55e1
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publicationDate 2014-04-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-102603207-B
titleOfInvention Method for growing fluorine-doped stannic oxide thin film with micro-nano structure on glass substrate
abstract The invention discloses a method for growing a fluorine-doped stannic oxide thin film with a micro-nano structure on a glass substrate. The method is implemented as follows: the glass substrate which is cleaned is placed in a vapor-deposition reaction chamber; an organic tin source and an organic fluorine source (which are precursors) utilize nitrogen as carrier gas, a catalyst H2O utilizes air as carrier gas, the nitrogen and the air are gasified in a bubbler respectively and then are introduced into a gas mixing chamber; the obtained mixed reaction gas is introduced into a film coating reactor to be conveyed on the glass substrate, the distance between an air jet hole in the film coating reactor and the glass surface is controlled to be 2-5mm, and the mass ratio of Sn to F in the organic air source is (2:1)-(3:1), and the mixed reaction gas is deposited on the surface of the glass substrate for 5-30s, and cooling. According to the method, the preparation process is simple, the used devices are simple, the environment is not polluted, the cost is low, the efficiency is high, the energy consumption is low, and the method is suitable for producing large-area transparent conductive films on line by float process; and the prepared fluorine-doped stannic oxide thin film with the micro-nano structure has good visible light transmission rate and good intermediate and far infrared reflectivity.
priorityDate 2012-03-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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