http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102593718-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_ede1de2d4dddfbd45a76468af8c43038 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-20 |
| filingDate | 2012-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2014-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_41743fe49da1d5dd3f5c63db1bcc4c2f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8d6705d4ff62966bfd07eb36d686f167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5136e78ac2ad3b16bfcdcf1c6acb7da3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6936000bc5c5383d3ec0142cd429506c http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f06a887f6519c50e512a9aa2f5ef27ae |
| publicationDate | 2014-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102593718-B |
| titleOfInvention | Preparation method for intermediate infrared laser |
| abstract | The invention relates to a preparation method for an intermediate infrared laser. The preparation method comprises the following steps of: preparing a silicon oxide grating layer; generating a layer of silicon nitride thin film on the surface of a device by using a plasma enhanced chemical vapor deposition method; preparing a holographic grating mask on the silicon nitride thin film by using a holographic exposure method; transferring a grating graph on the silicon nitride thin film by using a reactive ion etching method, so as to form a layer of silicon oxide grating mask; preparing a feedback grating at a position provided with a tabletop; selecting a photo-etching layout with a similar structure of the tabletop; preparing a photo-etching glue mask graph on the silicon nitride grating mask, and preparing a grating etching window on the silicon nitride grating mask; preparing a grating on the surface of the device through an ICP (Inductively Coupled Plasma) etching method by using a silicon nitride-photoresist double-layer mask, so that the grating entirely covers the position of the tabletop to be prepared on the device; and preparing the tabletop of the laser. With the adoption of the method provided by the invention, the properties of distributed feedback lasers can be improved. |
| priorityDate | 2012-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.