http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102593153-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02362 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02351 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02131 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31662 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02321 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-316 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2008-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2015-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2015-09-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-102593153-B |
| titleOfInvention | Semiconductor substrate, semiconductor device and its manufacture method |
| abstract | The disclosure relates to Semiconductor substrate, semiconductor device and its manufacture method.Even if Semiconductor substrate of the present invention pollutes semiconductor layer as also prevented impurity when glass substrate etc. in the support substrates that use heat resisting temperature is low, and improves the bond strength of support substrates and semiconductor layer.The present invention also provides a kind of semiconductor device, and this semiconductor device can reduce bonding leakage current by using semiconductor layer to form field effect transistor.The manufacture method of semiconductor device of the present invention comprises: form the oxide-film comprising the first halogen on the surface of Semiconductor substrate; By irradiating the ion of the second halogen, forming separating layer in the semiconductor substrate and the second halogen is comprised in the semiconductor substrate; Heat treated is carried out under the state clipping the dielectric film overlapping Semiconductor substrate in ground and the support substrates comprising hydrogen; And by making a part for Semiconductor substrate be separated in separating layer, providing package is containing the semiconductor layer of the second halogen on the support substrate. |
| priorityDate | 2007-05-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 84.