| abstract |
The invention provides a kind of semiconductor device, it is characterized in that, possess: lead frame or circuit substrate, stacked and/or be loaded in side by side on described lead frame or the circuit substrate semiconductor element of more than 1, described lead frame or circuit substrate and described semiconductor element are carried out the copper conductor that electricity engages, and described semiconductor element and described copper conductor are carried out the sealing material that seals, the wire diameter of wherein said copper conductor is 18 μm ~ 23 μm, described sealing material is made up of the solidfied material of composition epoxy resin, described composition epoxy resin contains (A) epoxy resin, (B) curing agent, (C) spherical silicon dioxide, (D) metal hydroxides and/or metal hydroxide solid solution, this semiconductor device obtains through singualtion operation after by described composition epoxy resin sealing moulding. |