http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-102576548-B

Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B5-855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11B5-746
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32412
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11B5-84
filingDate 2010-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2017-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2017-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-102576548-B
titleOfInvention For patterned disk medium application Plasma ion implantation technique during substrate temperature control
abstract The specific embodiment of the present invention reduces, during providing a kind of Plasma ion implantation technique in order to form pattern, the method that heat energy is built up, and the pattern for being formed includes magnetic domain and non-magnetic domain on the magnetic sensitive surface on substrate.In a specific embodiment, during Plasma ion implantation technique, the method for control base board temperature is comprised the steps of:A () is in processing chamber housing, the first part of Plasma ion implantation technique is carried out on substrate up to the first period, magnetic sensitive layer is formed with the substrate, the temperature of the wherein substrate is maintained below about Celsius 150 degree, b () is after the first part for completing Plasma ion implantation technique, cool down the temperature of the substrate, and (c) carries out the second part of Plasma ion implantation technique on the substrate, the temperature of the wherein substrate is maintained less than 150 degree Celsius.
priorityDate 2009-11-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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