| abstract |
The present invention relates to semiconductor device.In the super-junction structure of power MOSFET etc., the concentration of main unit part is of a relatively high, so the periphery for the peripheral end on structure or reduction surface field structure that use prior art is difficult to ensure that breakdown voltage equals to or higher than the breakdown voltage of cell mesh.Specifically, being occurs in problem, in the peripheral corner part of chip, owing to electric field concentrates the change causing punch through voltage to become sensitive for the charge imbalance in super-junction structure.In the present invention, in the such as each region in active cell area and chip periphery region in the semiconductor power device of power MOSFET with super-junction structure etc, in the zone line between couple with the main knot of second conduction type on the surface of the drift region of the first conduction type and have than the outer end of the outer end super-junction structure in the outer end of main knot and chip periphery region in reduction surface field region, main knot concentration lower concentration, the second conduction type surface. |