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filingDate 2010-08-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2015-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2015-12-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-102549755-B
titleOfInvention There is semiconductor device and the manufacture method thereof of oxygen diffusion impervious layer
abstract Provide the method and apparatus for the manufacture of transistor.Transistor comprises the gate stack (142,144,146) covering semi-conducting material (104,106,108,110).Gate stack comprises the deposited oxide layer (126) covering semi-conducting material, covers the oxygen diffusion impervious layer (128) of deposited oxide layer, covers the high-pound dielectric layer (134) of oxygen diffusion impervious layer; And cover the oxygen uptake conductive layer (138) of high-pound dielectric layer.The prevention of oxygen diffusion impervious layer is spread from deposited oxide layer to the oxygen of oxygen uptake conductive layer.
priorityDate 2009-09-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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