| abstract |
An interconnect structure is provided comprising at least one patterned and cured low-k material (18', 22') on a surface of a patterned graded capping layer (14). The at least one cured and patterned low-k material and the patterned graded capping layer each have a conductive fill region (26) embedded therein. The patterned and cured low-k material is the cured product of a functionalized polymer, a copolymer, or at least A blend of two, and the graded capping layer includes a lower region serving as a barrier region and an upper region having the antireflective properties of a permanent antireflective coating. |